(China (Mainland))
Product Summary
The FDD6690 is a 40V N-Channel PowerTrench MOSFET. It has been produced using Fairchild Semiconductor’s proprietary PowerTrench technology to deliver low rDS(on) and optimized BVDSS capability to offer superior performance benefit in the application. The applications of the FDD6690 are Inverter, Power Supplies.
Parametrics
FDD6690 absolute maximum ratings: (1)Drain to Source Voltage:40V; (2)Gate to Source Voltage:±20V; (3)Drain Current:Continuous (Package limited):50A, Continuous(Silicon limited):57A, Continuous:15.2A, Pulsed:100A; (4)Max Pulse Diode Current:100A; (5)Drain-Source Avalanche Energy:153mJ; (6)Power Dissipation: TC= 25℃:44W, TA= 25℃:3.1W, TA= 25℃:1.3W; (7)Operating and Storage Junction Temperature Range:-55℃ to +150℃.
Features
FDD6690 features: (1)Max rDS(on) = 8.5mΩ at VGS = 10V, ID = 14A; (2)Max rDS(on) = 11.0mΩ at VGS = 4.5V, ID = 11A; (3)Fast Switching; (4)RoHS Compliant.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 FDD6690A |
Fairchild Semiconductor |
MOSFET 30V N-Ch PowerTrench |
Data Sheet |
Negotiable |
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FDD6690A_Q |
Fairchild Semiconductor |
MOSFET 30V N-Ch PowerTrench |
Data Sheet |
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FDD6690S |
Fairchild Semiconductor |
MOSFET 30V N-Ch PowerTrench |
Data Sheet |
Negotiable |
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